Infineon HEXFET®, StrongIRFET™ IRFS7430TRLPBF, N-Channel MOSFET, 40 V Vdss, 195 A Id, 1.2 mOhm Rds(on) at 10 V, 460 nC Qg, D2PAK (TO-263), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.9V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 460 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14240 pF @ 25 V |
Total gate charge is 460 nC at 10 V — a heavy number that tells you the gate driver needs to source several amps to hit the target switching frequency. Plan for a dedicated gate-driver IC, not a logic-level output.
The D2PAK (TO-263) surface-mount package with the exposed tab carries the heat into the PCB copper pour.
The maximum on-resistance is 1.2 mOhm at a drain current of 100 A and a gate-source voltage of 10 V. That figure sets the conduction loss for high-current switching applications.
The IPD50R950CEAUMA1 is a CoolMOS CE device rated for 500 V drain-source and 4.3 A, with a 950 mOhm on-resistance — a completely different voltage and current class. The IRFS7430TRLPBF is a low-voltage, high-current part (40 V, 195 A); the IPD50R950 is a high-voltage, low-current switch. They are not functional alternatives.