Infineon Technologies · HEXFET®, StrongIRFET™ Series
Infineon HEXFET®, StrongIRFET™ IRFS7430TRLPBF, N-Channel MOSFET, 40 V Vdss, 195 A Id, 1.2 mOhm Rds(on) at 10 V, 460 nC Qg, D2PAK (TO-263), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.9V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 460 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14240 pF @ 25 V |
Total gate charge is 460 nC at 10 V — a heavy number that tells you the gate driver needs to source several amps to hit the target switching frequency. Plan for a dedicated gate-driver IC, not a logic-level output.
The D2PAK (TO-263) surface-mount package with the exposed tab carries the heat into the PCB copper pour.