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Infineon Technologies IRFS7430TRLPBF

IRFS7430TRLPBF N-Channel MOSFET, 40V, 195A, 1.2mOhm D2PAK

MPNIRFS7430TRLPBF
End of Life

Infineon HEXFET®, StrongIRFET™ IRFS7430TRLPBF, N-Channel MOSFET, 40 V Vdss, 195 A Id, 1.2 mOhm Rds(on) at 10 V, 460 nC Qg, D2PAK (TO-263), -55°C to 175°C.

$3.37Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS7430TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs1.2mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs460 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14240 pF @ 25 V

Product details

40 V, 195 A, 1.2 mOhm — the low-side workhorse

The headline figure is the 1.2 mOhm maximum on-resistance at 100 A, 10 V gate drive — that sets the conduction loss floor for a high-current synchronous rectifier or motor-drive low-side switch.

Gate charge and switching speed

Total gate charge is 460 nC at 10 V — a heavy number that tells you the gate driver needs to source several amps to hit the target switching frequency. The 14240 pF input capacitance at 25 V drain-source reinforces the same point: this is a large-die part built for low ohmic loss, not fast edge rates. Plan for a dedicated gate-driver IC, not a logic-level output.

Thermal and temperature range

Junction temperature spans -55°C to 175°C, which covers automotive under-hood and industrial motor-drive environments. The 375 W maximum power dissipation at case temperature is a theoretical ceiling — real-world dissipation depends on the heatsink and airflow. The D2PAK (TO-263) surface-mount package with the exposed tab carries the heat into the PCB copper pour.

Frequently asked questions

What is the Rds(on) of IRFS7430TRLPBF?

The maximum on-resistance is 1.2 mOhm at a drain current of 100 A and a gate-source voltage of 10 V. That figure sets the conduction loss for high-current switching applications.

How does IRFS7430TRLPBF compare to IPD50R950CEAUMA1?

The IPD50R950CEAUMA1 is a CoolMOS CE device rated for 500 V drain-source and 4.3 A, with a 950 mOhm on-resistance — a completely different voltage and current class. The IRFS7430TRLPBF is a low-voltage, high-current part (40 V, 195 A); the IPD50R950 is a high-voltage, low-current switch. They are not functional alternatives.