IRFS7430TRL7PP

Infineon Technologies · HEXFET®, StrongIRFET™ Series

IRFS7430TRL7PP, HEXFET® StrongIRFET™, N-Channel MOSFET, 40V Vdss, 240A Id, 0.75mOhm Rds(on) at 10V, 460nC Qg, D2PAK-7, -55°C to 175°C.

Infineon Technologies IRFS7430TRL7PP
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS7430TRL7PP specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C240A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs0.75mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs460 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13975 pF @ 25 V

Technical details

Low-loss 40V power switch for high-current rails

The IRFS7430TRL7PP is an N-channel MOSFET from Infineon's HEXFET® and StrongIRFET™ series, designed for low-voltage, high-current switching applications where conduction losses dominate the thermal budget.

Gate drive and switching considerations

Input capacitance (Ciss) is 13975 pF at 25 V drain-source; this large input capacitance sets the switching losses and the driver's average current draw at the operating frequency. The drive voltage range is 6 V to 10 V for achieving the specified Rds(on); operating at 6 V increases on-resistance above the datasheet minimum, so 10 V drive is recommended for full performance.

IRFS7430TRL7PP
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