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Infineon Technologies IRFS52N15DTRLP

IRFS52N15DTRLP HEXFET N-Ch MOSFET, 150V 51A D2PAK

MPNIRFS52N15DTRLP
End of Life

International Rectifier IRFS52N15DTRLP, HEXFET® series, N-Channel MOSFET, 150 V Vdss, 51 A Id, 32 mOhm Rds(on) at 36 A, 10 V, D2PAK (TO-263AB), -55°C to 175°C.

$2.75Ref. price · indicative, final on quote
Infineon Technologies IRFS52N15DTRLP datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFS52N15DTRLP specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C51A (Tc)
Power dissipation3.8W (Ta), 230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 36A, 10V
Gate charge (Qg) (Max) @ vgs89 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2770 pF @ 25 V

Product details

Gate charge and switching — what the driver needs to deliver

Total gate charge is 89 nC at 10 V. The input capacitance is 2770 pF at 25 V drain-source; that plus the gate resistance sets the turn-on and turn-off delay.

D2PAK footprint — thermal pad is the first thing to get right

The TO-263-3 (D2PAK) package has a large exposed tab on the bottom. Without that thermal path, the junction-to-ambient thermal resistance limits continuous current to well below the 51 A rating. The surface-mount assembly is straightforward for reflow, but the tab solder joint should be inspected — a void under the tab is a reliability risk.

ROHS3 compliant.

Frequently asked questions

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