IRFS4615TRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFS4615TRLPBF, N-Channel MOSFET, 150 V Vdss, 33 A Id, 42 mOhm Rds(on) at 10 V, 40 nC Qg, D2PAK (TO-263), -55 to 175 °C.

Infineon Technologies IRFS4615TRLPBF
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[IN STOCK] In Stock: 50 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS4615TRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation144W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs42mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1750 pF @ 50 V

Technical details

IRFS4615TRLPBF
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