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Infineon Technologies IRFS4615TRLPBF
Infineon Technologies

IRFS4615TRLPBF HEXFET N-Channel MOSFET, 150 V, 33 A, D2PAK

MPNIRFS4615TRLPBF
End of Life

Infineon HEXFET IRFS4615TRLPBF, N-Channel MOSFET, 150 V Vdss, 33 A Id, 42 mOhm Rds(on) at 10 V, 40 nC Qg, D2PAK (TO-263), -55 to 175 °C.

$2.04Ref. price · indicative, final on quote
IRFS4615TRLPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS4615TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation144W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs42mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1750 pF @ 50 V

Product details

150 V, 33 A N-channel HEXFET in D2PAK

The Infineon IRFS4615TRLPBF is a 150 V, 33 A N-channel MOSFET from the HEXFET series, housed in a surface-mount D2PAK (TO-263) package.

Switching-loss budget: gate charge and capacitance

Total gate charge is 40 nC at Vgs = 10 V. Input capacitance Ciss is 1750 pF at Vds = 50 V.

Thermal and environmental reach

Maximum power dissipation is 144 W at case temperature Tc — the actual continuous dissipation depends on the board's copper area and airflow, not just the die rating.

Frequently asked questions

What does the 42 mOhm Rds(on) mean for my BOM?

At 21 A drain current with 10 V gate drive, the maximum on-resistance is 42 mOhm. Conduction loss is I² × Rds(on); for a 10 A load that is about 4.2 W, which the D2PAK package can dissipate with adequate copper area on the PCB.