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Infineon Technologies IRFS4510TRLPBF

IRFS4510TRLPBF Infineon HEXFET N-Ch MOSFET, 100V 61A D2PAK

MPNIRFS4510TRLPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRFS4510TRLPBF, 100V Vdss, 61A Id, 13.9mOhm Rds(on) @ 37A, 10V, 87nC Qg, -55 to 175°C, PG-TO263-3 (D2PAK), Surface Mount, Tape & Reel.

$2.04Ref. price · indicative, final on quote
Infineon Technologies IRFS4510TRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFS4510TRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C61A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs13.9mOhm @ 37A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3180 pF @ 50 V

Product details

The 87 nC total gate charge at 10 V means a moderate driver current budget — at 100 kHz switching, the average gate drive current is about 8.7 mA, well within a standard gate driver IC's capability. Input capacitance of 3180 pF at 50 V Vds is typical for this die size; the switching node rise time is set by the driver's source/sink current into this capacitance plus the Miller plateau charge.

175 °C junction — industrial and under-hood margin

The 4 V maximum gate threshold at 100 µA drain current means the device is fully enhanced with a standard 10 V gate drive; it will not turn on with a 3.3 V logic signal.

D2PAK footprint and thermal management

A minimum of 6 cm² of 2 oz copper on the top layer is typical for dissipating 140 W at 175 °C junction.

Frequently asked questions

What is the Vgs(th) of the IRFS4510TRLPBF?

The maximum gate threshold voltage is 4 V at a drain current of 100 µA. The device requires a gate drive above 4 V to begin conducting and is fully enhanced at the recommended 10 V drive level.

Is the IRFS4510TRLPBF lead-free and ROHS compliant?

Yes, the IRFS4510TRLPBF is ROHS3 compliant, meaning it meets the latest Restriction of Hazardous Substances directive without exemptions.

What is the difference between IRFS4510TRLPBF and IRFS4510PBF?

The IRFS4510TRLPBF and IRFS4510PBF are electrically identical devices. The difference is packaging: the TRLPBF suffix indicates tape-and-reel packaging for automated assembly, while the PBF suffix typically indicates tube or bulk packaging. The die, ratings, and thermal characteristics are the same.