Infineon Technologies · HEXFET® Series
IRFS4410ZTRLPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 97 A Id, 9 mOhm Rds(on) at 58 A, 10 V, 120 nC Qg, TO-263-3 D²Pak, -55 to 175 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 97A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 58A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4820 pF @ 50 V |
The IRFS4410ZTRLPBF: The device is packaged in a TO-263-3 (D²Pak) surface-mount footprint, suited for automated assembly on a copper-fill island for thermal spreading.
Total gate charge is 120 nC at 10 V, with an input capacitance of 4820 pF at 50 V drain-source. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot on a 12 V or 15 V rail.
ROHS3 compliant per the listing.
