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Infineon Technologies IRFS4321TRLPBF

IRFS4321TRLPBF HEXFET N-Ch 150V 85A D2PAK MOSFET

MPNIRFS4321TRLPBF
End of Life

Infineon HEXFET IRFS4321TRLPBF, N-Channel MOSFET, 150 V Vdss, 85 A continuous drain, 15 mOhm Rds(on) at 10 V, D2PAK (TO-263) surface-mount, -55°C to 175°C junction temperature.

$3.7Ref. price · indicative, final on quote
Infineon Technologies IRFS4321TRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFS4321TRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C85A (Tc)
Power dissipation350W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 33A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4460 pF @ 25 V

Product details

Gate charge and driver budget

The IRFS4321TRLPBF: Total gate charge is 110 nC at 10 V. Input capacitance is 4460 pF at 25 V Vds. This capacitance, combined with the gate charge, sets the switching energy; the designer should verify the driver's sink/source capability against the Qg total and the target rise/fall time.

Housed in a D2PAK (TO-263-3) surface-mount package with the tab as the drain connection.

ROHS3 compliant. The ±30 V maximum gate-source rating gives margin for gate-drive transients in noisy environments.

Frequently asked questions

What is the difference between IRFS4321TRLPBF and IRFS4321PBF?

The die and package are identical. The TRLPBF suffix denotes Tape & Reel packaging; the PBF suffix denotes tube packaging. Electrical ratings are the same.