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Infineon Technologies IRFS4310TRLPBF

IRFS4310TRLPBF HEXFET N-Channel MOSFET, 100V 130A D2PAK

MPNIRFS4310TRLPBF
End of Life

Infineon IRFS4310TRLPBF, HEXFET series, N-Channel MOSFET, 100V Vdss, 130A Id, 7mOhm Rds(on) @ 75A/10V, 250nC Qg @ 10V, -55°C to 175°C, D2PAK (TO-263AB), Surface Mount, ROHS3 compliant.

$4.64Ref. price · indicative, final on quote
Infineon Technologies IRFS4310TRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFS4310TRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs250 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7670 pF @ 50 V

Product details

Gate drive and switching — 250 nC Qg at 10 V

The ±20 V maximum gate rating gives headroom for gate-drive overshoot in noisy environments.

The D2PAK has a large exposed tab — rework requires a preheat zone around 150°C to avoid thermal shock to the die, and the tab solder joint must be inspected for voids; a hot-air station with a wide nozzle works, but the thermal mass means a longer soak than a small-signal SO-8.

ROHS3 compliant. No official second-source or successor is listed, but the D2PAK footprint is standard across the industry — many 100 V N-channel MOSFETs in TO-263 share the same pad layout, though gate charge and Rds(on) vary.

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