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Infineon Technologies IRFS4229TRLPBF

IRFS4229TRLPBF HEXFET N-Channel MOSFET, 250 V, 45 A, D2PAK

MPNIRFS4229TRLPBF
End of Life

Infineon HEXFET® IRFS4229TRLPBF, N-Channel MOSFET, 250 Vdss, 45 A continuous drain at 25 °C case, 48 mOhm Rds(on) at 10 V gate drive, 110 nC gate charge, 175 °C junction, PG-TO263-3 (D²Pak) surface mount.

$5.51Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS4229TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation330W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs48mOhm @ 26A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4560 pF @ 25 V

Product details

250 V, 45 A N-channel — HEXFET in D²Pak

The 110 nC total gate charge at 10 V is the figure to budget for the gate-driver peak current. A 1 A driver can charge the gate in about 110 ns, supporting switching frequencies up to the low tens of kilohertz before driver losses dominate. The 4560 pF input capacitance at 25 V drain-source confirms the gate-driver output impedance needs to be low enough to avoid miller plateau ringing.

175 °C junction — usable headroom with a thermal caveat

However, the D²Pak (PG-TO263-3) on a standard FR-4 board with 1 oz copper has a junction-to-ambient thermal resistance around 60–80 °C/W — so the practical continuous current at 85 °C ambient is well below the 45 A headline figure. The 330 W power dissipation rating assumes the case is held at 25 °C, which requires a heatsink or forced air.

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