Infineon HEXFET® IRFS4229TRLPBF, N-Channel MOSFET, 250 Vdss, 45 A continuous drain at 25 °C case, 48 mOhm Rds(on) at 10 V gate drive, 110 nC gate charge, 175 °C junction, PG-TO263-3 (D²Pak) surface mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 48mOhm @ 26A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4560 pF @ 25 V |
A 1 A driver can charge the gate in about 110 ns, supporting switching frequencies up to the low tens of kilohertz before driver losses dominate.
However, the D²Pak (PG-TO263-3) on a standard FR-4 board with 1 oz copper has a junction-to-ambient thermal resistance around 60–80 °C/W — so the practical continuous current at 85 °C ambient is well below the 45 A headline figure.
Engineers need the datasheet for design validation and pin compatibility.
Buyers need to check real-time availability and lead time for BOM fulfillment.
Maintenance techs need a direct substitute if the part is unavailable or obsolete.
Brokers and buyers need lifecycle status to avoid supply chain disruptions.
Sourcing managers compare prices across distributors for cost optimization.
Engineers evaluate alternatives for dual sourcing or obsolescence planning.