Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRFS4229TRLPBF, N-Channel MOSFET, 250 Vdss, 45 A continuous drain at 25 °C case, 48 mOhm Rds(on) at 10 V gate drive, 110 nC gate charge, 175 °C junction, PG-TO263-3 (D²Pak) surface mount.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 48mOhm @ 26A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4560 pF @ 25 V |
A 1 A driver can charge the gate in about 110 ns, supporting switching frequencies up to the low tens of kilohertz before driver losses dominate.
However, the D²Pak (PG-TO263-3) on a standard FR-4 board with 1 oz copper has a junction-to-ambient thermal resistance around 60–80 °C/W — so the practical continuous current at 85 °C ambient is well below the 45 A headline figure.
