IRFS4227TRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-channel MOSFET, IRFS4227TRLPBF, 200 V drain-source, 62 A continuous drain, 26 mOhm Rds(on) at 10 V gate drive, D2PAK (TO-263) surface-mount, -40 °C to 175 °C junction.

Infineon Technologies IRFS4227TRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS4227TRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C62A (Tc)
Power dissipation330W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs26mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4600 pF @ 25 V

Technical details

That 26 mOhm figure is the spec to check against your load current and duty cycle.

175 °C junction — thermal headroom for high-ambient designs

The junction temperature range extends from -40 °C to 175 °C, which is the upper end for a power MOSFET. In a motor drive or PFC stage where the heatsink sits in a 70–85 °C ambient, that extra 25 °C over a 150 °C-rated part buys real margin before derating kicks in.

Gate charge and input capacitance — what the driver sees

The ±30 V maximum gate-source rating gives headroom for ringing on long gate traces.

D2PAK footprint — layout notes for the exposed tab

The D2PAK (TO-263) package has two leads plus the tab, which is the drain connection. The 0.50 mm lead pitch is typical for this package; the recommended land pattern is in the datasheet.

The HEXFET series has broad distribution, so multi-source availability is typical.

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