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Infineon Technologies IRFS4227TRLPBF

IRFS4227TRLPBF HEXFET N-Channel MOSFET, 200 V, 62 A, D2PAK

MPNIRFS4227TRLPBF
End of Life

Infineon HEXFET® N-channel MOSFET, IRFS4227TRLPBF, 200 V drain-source, 62 A continuous drain, 26 mOhm Rds(on) at 10 V gate drive, D2PAK (TO-263) surface-mount, -40 °C to 175 °C junction.

$3.01Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS4227TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C62A (Tc)
Power dissipation330W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs26mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4600 pF @ 25 V

Product details

Package and mounting

That 26 mOhm figure is the spec to check against your load current and duty cycle.

175 °C junction — thermal headroom for high-ambient designs

The junction temperature range extends from -40 °C to 175 °C, which is the upper end for a power MOSFET. In a motor drive or PFC stage where the heatsink sits in a 70–85 °C ambient, that extra 25 °C over a 150 °C-rated part buys real margin before derating kicks in. The 330 W power dissipation at case temperature is a theoretical ceiling — real-world dissipation is limited by the thermal resistance of the board and heatsink.

Gate charge and input capacitance — what the driver sees

Total gate charge is 98 nC at 10 V, and input capacitance is 4600 pF at 25 V drain-source. For a 100 kHz switching frequency the average gate-drive current is about 9.8 mA — well within a standard gate-driver IC, but the peak current during the Miller plateau needs a driver with at least 2 A peak capability to keep switching edges clean. The ±30 V maximum gate-source rating gives headroom for ringing on long gate traces.

D2PAK footprint — layout notes for the exposed tab

The D2PAK (TO-263) package has two leads plus the tab, which is the drain connection. The 0.50 mm lead pitch is typical for this package; the recommended land pattern is in the datasheet.

The HEXFET series has broad distribution, so multi-source availability is typical.

Frequently asked questions

Is IRFS4227TRLPBF RoHS compliant?

Yes, the IRFS4227TRLPBF is listed as ROHS3 compliant, meaning it meets the latest RoHS directive requirements.

What is the difference between IRFS4227TRLPBF and IRFS4227PBF?

The difference is packaging: the TRLPBF suffix indicates Tape & Reel packaging, while the PBF suffix typically denotes tube or bulk packaging. The electrical specifications are identical.