Infineon HEXFET IRFS4010TRL7PP, N-Channel MOSFET, 100V Vdss, 190A Id, 4mOhm Rds(on) at 10V, 230nC Qg, D2PAK-7 (TO-263-7) surface mount, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 190A (Tc) |
| Power dissipation | 380W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 110A, 10V |
| Gate charge (Qg) (Max) @ vgs | 230 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9830 pF @ 50 V |
This part comes in a D2PAK-7 (TO-263-7) surface-mount package with six leads plus the tab.
Rated for junction temperature from -55°C to 175°C. The 380W dissipation is achievable with an effective heatsink.
The IRFS4010TRL7PP is ROHS3 compliant.
Yes, the IRFS4010TRL7PP is ROHS3 compliant — it meets the latest exemption-free lead-free requirements.