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Infineon Technologies IRFS38N20DTRLP

IRFS38N20DTRLP HEXFET N-Ch MOSFET, 200V, 43A, D2PAK

MPNIRFS38N20DTRLP
End of Life

International Rectifier HEXFET® N-Channel MOSFET, 200 V Vdss, 43 A continuous drain at 25°C, 54 mOhm Rds(on) at 26 A and 10 V, 91 nC gate charge, D2PAK (TO-263) surface-mount package, -55°C to 175°C junction temperature.

$3.31Ref. price · indicative, final on quote
Infineon Technologies IRFS38N20DTRLP datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFS38N20DTRLP specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation3.8W (Ta), 300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs54mOhm @ 26A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2900 pF @ 25 V

Product details

200 V, 43 A HEXFET in a D2PAK tab

The IRFS38N20DTRLP is an N-channel HEXFET power MOSFET from International Rectifier, rated for 200 V drain-to-source and 43 A continuous drain current at a 25°C case temperature.

Conduction loss and gate drive budget

At 26 A the conduction loss is 1.4 W per device; double the current to 43 A and the I²R loss climbs to 3.8 W, which is the power dissipation limit at ambient. The gate charge is 91 nC at 10 V — a 100 kHz switching frequency draws 9.1 mA average from the gate driver, well within the capability of a standard driver IC.

Temperature grade and package reality

The D2PAK tab needs a soldered copper area on the PCB to pull heat out; a two-layer board with a 1 oz pour under the tab will handle about 20 A continuous before the junction hits 150°C. The 300 W power dissipation at the case is a theoretical ceiling with an infinite heatsink — real designs stay well below that.

The HEXFET series has been in production for decades; the die technology is mature and the supply base is stable.

Frequently asked questions

What is the Rds(on) of IRFS38N20DTRLP?

That is the specified operating point for the Rds(on) — at lower currents or higher temperatures the actual value will differ, but this is the number to use for conduction loss calculations at the nominal load.

Is IRFS38N20DTRLP RoHS compliant?

Yes, it is rated ROHS3 compliant, meaning it meets the EU Restriction of Hazardous Substances directive including the exemption-free category. No lead, mercury, cadmium, or other restricted materials in the bill of materials.