Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRFS3806TRLPBF, N-Channel MOSFET, 60V Vdss, 43A Id, 15.8mOhm Rds(on) at 10V, 71W, D2PAK (TO-263), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 43A (Tc) |
| Power dissipation | 71W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 50µA |
| Rds on (Max) @ id, vgs | 15.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 50 V |
It comes in the surface-mount D2PAK (TO-263-3) package. The 15.8 mOhm on-resistance at 10V gate drive keeps conduction losses manageable in a 71W dissipation budget.
No last-time-buy or end-of-life notice is recorded. For BOM lines that need a 60V N-channel in D2PAK, this is a straightforward production-part pick — no lifecycle risk to flag.
