Infineon Technologies · HEXFET® Series
IRFS3607TRLPBF, Infineon HEXFET® series, N-Channel MOSFET, 75 V Vdss, 80 A Id, 9 mOhm Rds(on) at 10 V, 84 nC Qg, D2PAK (TO-263), -55 to 175 °C, ROHS3 compliant, Active.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 46A, 10V |
| Gate charge (Qg) (Max) @ vgs | 84 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3070 pF @ 50 V |
The gate charge of 84 nC at 10 V is moderate for a 75 V / 80 A device.
The junction temperature range spans -55 °C to 175 °C. The 140 W power dissipation at case temperature is a package limit.
It is ROHS3 compliant.
