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Infineon Technologies IRFS3307ZTRRPBF
Infineon Technologies

IRFS3307ZTRRPBF MOSFET N-CH 75V 120A D2PAK, 5.8mOhm Rds(on)

MPNIRFS3307ZTRRPBF
End of Life

Infineon HEXFET® IRFS3307ZTRRPBF, N-Channel MOSFET, 75V Vdss, 120A Id, 5.8mOhm Rds(on) @ 75A/10V, 110nC Qg, D²PAK (TO-263), -55°C to 175°C.

$2.8Ref. price · indicative, final on quote
IRFS3307ZTRRPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS3307ZTRRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs5.8mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4750 pF @ 50 V

Product details

The 5.8 mOhm maximum Rds(on) at 75 A, 10 V gate drive sets the conduction loss floor for a high-current switching node — at 75 A the on-state dissipation is roughly 33 W, which the 230 W package limit can handle with adequate heatsinking.

Package and mounting — D2PAK footprint decisions

The IRFS3307ZTRRPBF comes in a D²PAK (TO-263-3) surface-mount package with the drain tab as the large exposed pad. For a 120 A continuous drain current, the PCB copper pour area and the number of thermal vias under the tab determine the real-world RthJA — the package alone can handle 230 W at case temperature, but that assumes the board can pull the heat away. The ±20 V maximum gate-source voltage is standard for logic-level gate drive circuits; the 10 V drive voltage for minimum Rds(on) means a 12 V rail or a dedicated gate-driver supply is needed to hit the 5.8 mOhm floor.

Lifecycle and supply posture

The ROHS3 compliance is confirmed.

Frequently asked questions

What is the Rds(on) of IRFS3307ZTRRPBF?

This is the on-resistance figure used for conduction-loss calculations in the power stage.