IRFS3307ZTRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFS3307ZTRLPBF N-Channel MOSFET, 75V Vdss, 120A Id, 5.8mOhm Rds(on) at 10V, 110nC gate charge, D2PAK (TO-263) package, -55°C to 175°C operating temperature.

Infineon Technologies IRFS3307ZTRLPBF
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[IN STOCK] In Stock: 4 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS3307ZTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs5.8mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4750 pF @ 50 V

Technical details

Gate charge and switching — 110 nC at 10 V

Total gate charge is 110 nC at 10 V. That is a moderate number for a 75 V part — it means the gate driver needs to source and sink about 1.1 A to switch at 100 kHz, which is manageable with a standard driver IC. The input capacitance is 4750 pF at 50 V drain-source, so the Miller plateau is not excessive.

Surface-mount D2PAK (TO-263-3) package with the drain tab as the primary thermal path.

ROHS3 compliant. The tape-and-reel variant (TR suffix) ships on 13-inch reels; cut-tape quantities are also available.

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