IRFS3306TRLPBF, HEXFET series, N-Channel MOSFET, 60V Vdss, 120A Id, 4.2mOhm Rds(on) at 75A 10V, 120nC Qg, -55°C to 175°C, TO-263-3 D2PAK, Surface Mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 4.2mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4520 pF @ 50 V |
The IRFS3306TRLPBF: The 4.2 mOhm maximum Rds(on) at 75 A with 10 V gate drive sets the conduction-loss floor for a high-current switching node.
Total gate charge is 120 nC at 10 V. The input capacitance Ciss is 4520 pF at 50 V drain. Gate threshold voltage is 4 V maximum at 150 µA drain current.
Maximum junction temperature is 175 °C.
RoHS3 compliant per the lifecycle entry.
Maximum Rds(on) is 4.2 mOhm at 75 A drain current with 10 V gate drive, measured at 25 °C junction temperature. The on-resistance increases with junction temperature per the normalised curve in the datasheet.
At 120 A continuous drain current, the 4.2 mOhm Rds(on) produces about 60 W of conduction loss at 25 °C — the TO-263 D2PAK package cannot dissipate that without a large copper area on the PCB or an external heatsink. The 230 W power dissipation rating at case temperature assumes the case is held at 25 °C, which requires active cooling or a substantial thermal path.
Yes, the lifecycle entry lists it as ROHS3 Compliant.