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Infineon Technologies IRFS3306TRLPBF
Infineon Technologies

IRFS3306TRLPBF N-Channel MOSFET, 60V 120A, 4.2mOhm Rds(on)

MPNIRFS3306TRLPBF
End of Life

IRFS3306TRLPBF, HEXFET series, N-Channel MOSFET, 60V Vdss, 120A Id, 4.2mOhm Rds(on) at 75A 10V, 120nC Qg, -55°C to 175°C, TO-263-3 D2PAK, Surface Mount.

$2.74Ref. price · indicative, final on quote
IRFS3306TRLPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS3306TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs4.2mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4520 pF @ 50 V

Product details

60 V N-channel — conduction loss and thermal ceiling

The IRFS3306TRLPBF: The 4.2 mOhm maximum Rds(on) at 75 A with 10 V gate drive sets the conduction-loss floor for a high-current switching node.

Gate drive and switching budget

Total gate charge is 120 nC at 10 V. The input capacitance Ciss is 4520 pF at 50 V drain. Gate threshold voltage is 4 V maximum at 150 µA drain current. The recommended drive voltage for minimum Rds(on) is 10 V.

Thermal and package reality

Maximum junction temperature is 175 °C. The TO-263 D2PAK surface-mount package relies on the PCB copper area under the tab for heat spreading. The ±20 V maximum gate-source rating gives margin for gate-drive overshoot in a hard-switching topology.

Sourcing and compliance

RoHS3 compliant per the lifecycle entry.

Frequently asked questions

What is the Rds(on) of IRFS3306TRLPBF?

Maximum Rds(on) is 4.2 mOhm at 75 A drain current with 10 V gate drive, measured at 25 °C junction temperature. The on-resistance increases with junction temperature per the normalised curve in the datasheet.

Does IRFS3306TRLPBF require a heatsink?

At 120 A continuous drain current, the 4.2 mOhm Rds(on) produces about 60 W of conduction loss at 25 °C — the TO-263 D2PAK package cannot dissipate that without a large copper area on the PCB or an external heatsink. The 230 W power dissipation rating at case temperature assumes the case is held at 25 °C, which requires active cooling or a substantial thermal path.

Is IRFS3306TRLPBF RoHS compliant?

Yes, the lifecycle entry lists it as ROHS3 Compliant.