IRFS3206TRRPBF

Infineon Technologies · HEXFET® Series

IRFS3206TRRPBF, HEXFET series, N-channel MOSFET, 60 V Vdss, 120 A continuous drain, 3 mOhm Rds(on) at 10 V, 170 nC gate charge, D2PAK surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRFS3206TRRPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 58 pcs
$2.55/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS3206TRRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6540 pF @ 50 V

Technical details

120 A, 60 V N-channel HEXFET in D2PAK

It comes in a D2PAK (TO-263-3) surface-mount package with an exposed tab for heat sinking.

3 mOhm Rds(on) — what it means for conduction loss

That translates to about 17 W conduction loss at 75 A — manageable with a decent copper area on the D2PAK tab. At 120 A the loss climbs to ~43 W, so the thermal design (copper pour, airflow, or heatsink) must match the actual load current. For a 100 kHz switching application, the average gate drive current is about 17 mA — well within a typical driver's capability.

Package and mounting — D2PAK reality

The D2PAK (TO-263-3) package has two leads plus the tab.

The ROHS3 compliance is confirmed, making it suitable for designs requiring lead-free soldering and EU RoHS conformance.

IRFS3206TRRPBF
[ALLOC] verified
Quote