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Infineon Technologies IRFS3206TRRPBF
Infineon Technologies

IRFS3206TRRPBF HEXFET N-Channel MOSFET, 60 V, 120 A, D2PAK

MPNIRFS3206TRRPBF
End of Life

IRFS3206TRRPBF, HEXFET series, N-channel MOSFET, 60 V Vdss, 120 A continuous drain, 3 mOhm Rds(on) at 10 V, 170 nC gate charge, D2PAK surface mount, -55°C to 175°C junction temperature.

$3.11Ref. price · indicative, final on quote
IRFS3206TRRPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS3206TRRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6540 pF @ 50 V

Product details

120 A, 60 V N-channel HEXFET in D2PAK

It comes in a D2PAK (TO-263-3) surface-mount package with an exposed tab for heat sinking. With a junction temperature range from -55°C to 175°C, this part handles under-hood automotive and industrial environments where ambient heat is high.

3 mOhm Rds(on) — what it means for conduction loss

At 75 A drain current and 10 V gate drive, the maximum Rds(on) is 3 mOhm. That translates to about 17 W conduction loss at 75 A — manageable with a decent copper area on the D2PAK tab. At 120 A the loss climbs to ~43 W, so the thermal design (copper pour, airflow, or heatsink) must match the actual load current. The gate charge of 170 nC at 10 V means the gate driver needs to source and sink enough current to switch the MOSFET at the target frequency. For a 100 kHz switching application, the average gate drive current is about 17 mA — well within a typical driver's capability.

Package and mounting — D2PAK reality

The D2PAK (TO-263-3) package has two leads plus the tab. The 300 W power dissipation at case temperature is only achievable with proper heatsinking — on a bare board without a heatsink, derate aggressively.

Lifecycle and compliance

The ROHS3 compliance is confirmed, making it suitable for designs requiring lead-free soldering and EU RoHS conformance.

Frequently asked questions

What is the difference between IRFS3206TRRPBF and IRFS3206PBF?

The 'TRRPBF' suffix indicates Tape & Reel packaging, while 'PBF' typically denotes a lead-free (Pb-free) finish in tube or bulk. Both are ROHS3 compliant and electrically identical. The TRRPBF variant is the pick-and-place-friendly reel option.

Can IRFS3206TRRPBF replace IRFS3206PBF in a design?

Yes, the two parts share the same die and electrical specs — the difference is only in packaging format. The TRRPBF variant is Tape & Reel; the PBF variant is typically tube. Both are ROHS3 compliant and footprint-compatible.