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Infineon Technologies IRFS3107TRLPBF

IRFS3107TRLPBF N-Channel MOSFET, 75 V, 195 A, D2PAK

MPNIRFS3107TRLPBF
End of Life

Infineon HEXFET N-Channel MOSFET, IRFS3107TRLPBF, 75 V Vdss, 195 A Id, 3 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55 to 175 °C, Tape & Reel.

$4.78Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS3107TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation370W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3mOhm @ 140A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9370 pF @ 50 V

Product details

75 V, 195 A — the low Rds(on) drives the selection

The headline spec is the 3 mOhm maximum on-resistance at Vgs = 10 V and Id = 140 A — this is the number that determines conduction losses in a high-current path like a motor drive, battery isolator, or DC-DC converter primary switch. At 75 V the part sits in the low-voltage, high-current class, distinct from higher-voltage CoolMOS parts that trade Rds(on) for breakdown voltage.

175 °C junction — thermal headroom for dense layouts

The operating junction temperature range is -55 to 175 °C, which is the extended range for automotive and industrial environments. The 175 °C ceiling allows the part to run at higher case temperatures without derating the current as aggressively as a 150 °C-rated device — useful when the PCB copper area is limited or the ambient is high. The 370 W power dissipation at case temperature is a theoretical maximum; real dissipation is set by the thermal impedance of the board and heatsink.

Gate charge and input capacitance — driver sizing

Total gate charge at 10 V is 240 nC, and input capacitance is 9370 pF at Vds = 50 V. For a 100 kHz switching frequency, the average gate drive current needed is 240 nC × 100 kHz = 24 mA, but the peak current during switching transitions is much higher — a 2 A gate driver is a practical minimum to keep switching losses under control. The 9370 pF input capacitance also means the driver must supply enough instantaneous current to charge that capacitance within the desired dead-time window.

D2PAK (TO-263) — surface-mount power package

The IRFS3107TRLPBF comes in the D2PAK (TO-263-3) surface-mount package with two leads plus the tab. The package is compatible with standard reflow profiles; no special handling beyond moisture sensitivity level (MSL) typical for D2PAK. The Tape & Reel option (TR suffix) is the volume-production format.

The ROHS3 compliance is confirmed, covering the full substance restriction list including the four phthalates.

Frequently asked questions

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