IRFS3006TRL7PP

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-Channel MOSFET, 60 V, 240 A, 2.1 mOhm at 10 V, TO-263-7 D²Pak, -55 to 175 °C.

Infineon Technologies IRFS3006TRL7PP
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[IN STOCK] In Stock: 46 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS3006TRL7PP specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C240A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.1mOhm @ 168A, 10V
Gate charge (Qg) (Max) @ vgs300 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8850 pF @ 50 V

Technical details

On-resistance and conduction loss

The IRFS3006TRL7PP: Maximum on-resistance is 2.1 mOhm at 168 A drain current with a 10 V gate drive.

Switching characteristics and gate drive

Gate charge is 300 nC at 10 V. Input capacitance is 8850 pF at 50 V drain-to-source. The ±20 V maximum gate-to-source voltage gives good margin for gate-drive overshoot.

The TO-263-7 D²Pak (also called D2PAK-7) is a surface-mount power package with a large exposed copper tab for thermal conduction to the PCB. The seven leads include an extra source connection that lowers the package resistance and improves current sharing versus the standard 3-lead D²Pak. The supplier device package is D2PAK (7-Lead). Mounting requires a copper land pattern with adequate thermal vias to a heatsink layer; the tab is the drain connection and must be isolated or connected accordingly.

The HEXFET® series is an established Infineon power MOSFET family with broad application support and multiple second-source options in similar voltage/current classes.

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