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Infineon Technologies IRFS3004TRLPBF

IRFS3004TRLPBF HEXFET N-Channel MOSFET, 40V, 195A, 1.75mOhm

MPNIRFS3004TRLPBF
End of Life

Infineon HEXFET series, IRFS3004TRLPBF, N-Channel MOSFET, 40 Vdss, 195 A continuous drain, 1.75 mOhm Rds(on) at 10 V, 240 nC gate charge, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.

$3.94Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS3004TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C195A (Ta)
Power dissipation380W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.75mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9200 pF @ 25 V

Product details

40 V, 195 A N-channel — the conduction-loss floor for high-current switching

The 240 nC total gate charge at 10 V means the gate driver must supply an average current of I = Qg × fsw — at 100 kHz switching, that is 24 mA from the driver, well within a standard totem-pole gate-drive IC but worth checking against a weak logic-output drive.

Thermal headroom and package — the D2PAK tab is the heat path

Junction temperature range is -55°C to 175°C, extending 25°C above the common 150°C ceiling. For a 380 W maximum power dissipation at the case, the thermal design must pull heat through the D2PAK exposed tab into a copper island on the PCB — the tab is the primary thermal path, not the plastic body. The 9200 pF input capacitance at 25 V drain-source means the gate-drive loop inductance matters — keep the driver close and the gate resistor physically near the FET gate lead.

Frequently asked questions

What is the IRFS3004TRLPBF's on-resistance and what gate voltage drives it?

The drive voltage for achieving the rated Rds(on) is 10 V; a lower gate voltage increases on-resistance.

Is IRFS3004TRLPBF RoHS compliant?

Yes, it is ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive for lead-free soldering processes.