40 V, 240 A N-channel — what this HEXFET delivers
The Infineon IRFS3004TRL7PP is an N-channel MOSFET from the HEXFET® series, rated for a drain-to-source voltage of 40 V and a continuous drain current of 240 A at 25 °C case temperature. The on-resistance is 1.25 mOhm maximum at 195 A with a 10 V gate drive, which puts this part in the low-voltage, high-current power-switching class — synchronous rectification, motor-drive output stages, battery isolation, and DC-DC converter primary switches. The D2PAK-7 (TO-263-7) surface-mount package with six leads plus tab handles the 380 W power dissipation when properly heatsunk. Junction temperature spans -55 °C to 175 °C, covering automotive under-hood and industrial high-ambient environments.
Gate charge and drive requirements
Maximum gate charge is 240 nC at 10 V, with an input capacitance of 9130 pF at 25 V drain bias. The drive voltage for rated Rds(on) is 10 V, and the gate threshold is 4 V maximum at 250 µA.
Package and mounting
Supplied in Tape & Reel or Cut Tape, the device uses the D2PAK-7 footprint (TO-263-7, six leads plus tab). The tab is the drain connection and must be soldered to an adequate copper area on the PCB for both electrical and thermal paths.
Lifecycle and procurement
No end-of-life notice or last-time-buy schedule is in effect for this order code.