40 V, 240 A N-channel — what this HEXFET delivers
The Infineon IRFS3004TRL7PP is an N-channel MOSFET from the HEXFET® series, rated for a drain-to-source voltage of 40 V and a continuous drain current of 240 A at 25 °C case temperature. The on-resistance is 1.25 mOhm maximum at 195 A with a 10 V gate drive, which puts this part in the low-voltage, high-current power-switching class — synchronous rectification, motor-drive output stages, battery isolation, and DC-DC converter primary switches. The D2PAK-7 (TO-263-7) surface-mount package with six leads plus tab handles the 380 W power dissipation when properly heatsunk.
Gate charge and drive requirements
Maximum gate charge is 240 nC at 10 V, with an input capacitance of 9130 pF at 25 V drain bias. The drive voltage for rated Rds(on) is 10 V, and the gate threshold is 4 V maximum at 250 µA.