Infineon HEXFET series IRFR9120NTRPBF, P-Channel MOSFET, 100 V drain-source, 6.6 A continuous drain, 480 mOhm Rds(on) at 10 V gate drive, D-Pak (TO-252) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.6A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 480mOhm @ 3.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 350 pF @ 25 V |
Total gate charge is 27 nC at 10 V gate drive.
Cut Tape quantities are also listed for prototyping or low-volume builds.
Without it, derate aggressively above about 2 A continuous. The maximum gate-source voltage is ±20 V, so a 10 V gate drive rail is safe.
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