Where it fits — load switches, secondary-side rectification, battery management
A P-channel part like this is the go-to for high-side load switching where you want to avoid a charge-pump gate driver — just pull the gate low to turn it on.
IRFR9024NTRPBF
Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRFR9024NTRPBF — P-Channel MOSFET, 55 V Vdss, 11 A continuous drain, 175 mOhm Rds(on) at 10 V, 19 nC gate charge, D-Pak (TO-252) surface-mount package, -55°C to 150°C operating junction temperature.
[IN STOCK] In Stock: 19,535 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 38W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 175mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 350 pF @ 25 V |
Technical details
IRFR9024NTRPBF
[ALLOC] verified