IRFR9024NTRLPBF

Infineon Technologies · HEXFET® Series

IRFR9024NTRLPBF, HEXFET® Series, P-Channel MOSFET, 55V Vdss, 11A Id, 175mOhm Rds(on) @ 10V, DPAK (TO-252), -55°C to 150°C, ROHS3 compliant.

Infineon Technologies IRFR9024NTRLPBF
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[IN STOCK] In Stock: 1 pcs
$0.91/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR9024NTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs175mOhm @ 6.6A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V

Technical details

P-Channel 55 V, 11 A HEXFET — high-side switch for 12 V/24 V rails

Packaged in a surface-mount DPAK (TO-252), it is designed for high-side switching applications where a P-Channel device simplifies the gate drive — no charge pump or bootstrap needed. Typical uses include load switches in automotive body electronics, DC-DC converters, battery protection circuits, and power management in industrial and telecom equipment.

Active production, ROHS3 compliant — no LTB pressure

No last-time-buy window is in effect, and no successor has been announced.

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