P-Channel 55 V, 11 A HEXFET — high-side switch for 12 V/24 V rails
The IRFR9024NTRLPBF is a P-Channel enhancement-mode MOSFET from Infineon's HEXFET series, rated for 55 V drain-source breakdown and 11 A continuous drain current at 25°C case temperature. Packaged in a surface-mount DPAK (TO-252), it is designed for high-side switching applications where a P-Channel device simplifies the gate drive — no charge pump or bootstrap needed. Typical uses include load switches in automotive body electronics, DC-DC converters, battery protection circuits, and power management in industrial and telecom equipment. The -55°C to 150°C junction temperature range qualifies it for harsh environments such as under-hood automotive, outdoor base stations, and factory-floor motor drives.
Active production, ROHS3 compliant — no LTB pressure
The IRFR9024NTRLPBF carries an Active lifecycle status and is ROHS3 compliant, covering all six original substances plus the four phthalates. No last-time-buy window is in effect, and no successor has been announced.
