IRFR7540TRPBF

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET series, IRFR7540TRPBF, N-Channel MOSFET, 60 V Vdss, 90 A Id, 4.8 mOhm Rds(on), D-PAK (TO-252AA) surface-mount package.

Infineon Technologies IRFR7540TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR7540TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.7V @ 100µA
Rds on (Max) @ id, vgs4.8mOhm @ 66A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4360 pF @ 25 V

Technical details

60 V, 90 A, 4.8 mOhm — StrongIRFET power switch

The IRFR7540TRPBF: The D-PAK (TO-252AA) surface-mount package suits automated assembly on standard PCB footprints with a copper-pad thermal land for heat spreading.

Total gate charge Qg is 130 nC at 10 V — a moderate figure for a 90 A FET, meaning the gate driver must source around 1.3 A peak to hit a 100 ns rise time. The recommended drive voltage window is 6 V to 10 V for achieving the rated Rds(on) minimum and maximum.

The TO-252-3 (DPak) package has a single exposed tab on the back side — the drain terminal. For the PCB layout engineer: the copper pad under the tab must be sized to the 140 W power dissipation rating at the case; a 1-oz copper pour of at least 8 cm² per side is a starting point for 25°C ambient still-air conditions, though the actual derating follows the junction-to-ambient thermal resistance curve.

IRFR7540TRPBF
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