60 V, 90 A, 4.8 mOhm — StrongIRFET power switch
The IRFR7540TRPBF: The D-PAK (TO-252AA) surface-mount package suits automated assembly on standard PCB footprints with a copper-pad thermal land for heat spreading.
Gate charge and switching profile
Total gate charge Qg is 130 nC at 10 V — a moderate figure for a 90 A FET, meaning the gate driver must source around 1.3 A peak to hit a 100 ns rise time. The input capacitance Ciss is 4360 pF at 25 V drain bias, which sets the driver's dynamic current draw and the switching edge rate. The recommended drive voltage window is 6 V to 10 V for achieving the rated Rds(on) minimum and maximum.
Package and thermal interface
The TO-252-3 (DPak) package has a single exposed tab on the back side — the drain terminal. For the PCB layout engineer: the copper pad under the tab must be sized to the 140 W power dissipation rating at the case; a 1-oz copper pour of at least 8 cm² per side is a starting point for 25°C ambient still-air conditions, though the actual derating follows the junction-to-ambient thermal resistance curve.
Lifecycle and sourcing
No official second-source or pin-compatible alternate is listed in the manufacturer's cross-reference data.