On-resistance and gate drive — 295 mOhm at 10V
Maximum on-resistance is 295 mOhm at 6.6A drain current with 10V gate drive. That 10V drive voltage is the recommended rail for achieving the lowest Rds(on); if your gate driver only swings 5V, the FET will not fully enhance and conduction losses climb. The gate charge totals 66 nC at 10V, so a driver sourcing 1A can switch it in about 66 ns — fast enough for a 100 kHz PWM load.
Thermal and temperature range — 110W dissipation, -55 to 175°C
Input capacitance is 860 pF at 25V drain, light enough that the gate driver does not need a pre-driver stage.