Infineon HEXFET IRFR6215TRLPBF, P-Channel MOSFET, 150 V Vdss, 13 A Id, 295 mOhm Rds(on) max at 10 Vgs, D-Pak (TO-252) surface mount, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 295mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 66 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 860 pF @ 25 V |
Gate charge totals 66 nC at 10 V, so a gate driver sourcing 1 A can switch the FET in roughly 66 ns — fast enough for mid-frequency SMPS and motor pre-drive stages.
The 175°C maximum junction also provides headroom in high-current designs where self-heating pushes the die temperature well above the board ambient.
The 0.50 mm pitch leads are compatible with standard DPAK land patterns.
Buyers need to verify electrical parameters and footprint compatibility before design-in.
Sourcing buyers need to find authorized distributors with stock.
BOM planners require unit pricing for cost calculations.
Design engineers need lifecycle status to avoid end-of-life risks.
Maintenance techs or buyers may need alternatives if the part is unavailable.
Design engineers need to confirm pin compatibility with existing layouts.