Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFR6215TRLPBF, P-Channel MOSFET, 150 V Vdss, 13 A Id, 295 mOhm Rds(on) max at 10 Vgs, D-Pak (TO-252) surface mount, -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 295mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 66 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 860 pF @ 25 V |
Gate charge totals 66 nC at 10 V, so a gate driver sourcing 1 A can switch the FET in roughly 66 ns — fast enough for mid-frequency SMPS and motor pre-drive stages.
The 175°C maximum junction also provides headroom in high-current designs where self-heating pushes the die temperature well above the board ambient.
The 0.50 mm pitch leads are compatible with standard DPAK land patterns.
