IRFR5410TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFR5410TRPBF, P-Channel MOSFET, 100 V Vdss, 13 A Id, 205 mOhm Rds(on) at 10 V, 58 nC Qg, D-Pak surface mount, -55°C to 150°C junction temperature.

Infineon Technologies IRFR5410TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR5410TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation66W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs205mOhm @ 7.8A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds760 pF @ 25 V

Technical details

100 V P-channel switch — the high-side load driver

That 100 V ceiling puts it in the high-voltage P-channel class — useful for high-side switching where a positive supply rail needs to be disconnected from the load without a charge-pump or bootstrap circuit.

For a 100 kHz switching frequency, the average gate-drive current needed is 58 nC × 100 kHz = 5.8 mA — a standard gate-driver IC handles that easily. The input capacitance is 760 pF at 25 V drain-source, which gives a rough turn-on delay of a few tens of nanoseconds with a 10 Ω gate resistor.

IRFR5410TRPBF
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