100 V, 35 A N-channel MOSFET in DPAK — what it delivers
The IRFR540ZTRPBF is a 100 V, 35 A N-channel power MOSFET from Infineon's HEXFET® series, housed in a surface-mount DPAK (TO-252) package. It is designed for high-efficiency switching in DC-DC converters, motor drives, and power management circuits where low on-resistance and fast switching are required. The 28.5 mOhm maximum Rds(on) at 21 A and 10 V gate drive keeps conduction losses low, while the 59 nC gate charge at 10 V supports moderate switching frequencies without excessive driver burden.
Rds(on) and gate charge — the switching trade-off
The 28.5 mOhm on-resistance at 21 A and 10 V is the figure to use for steady-state conduction loss calculations. At 35 A the Rds(on) will be higher due to self-heating; the 91 W power dissipation limit at the case sets the thermal boundary.
Temperature range and environment
Rated for a junction temperature range of -55°C to 175°C, this MOSFET can handle automotive under-hood, industrial motor-drive cabinets, and outdoor telecom enclosures where ambient heat soaks the board.
Active lifecycle — no LTB concern
There is no last-time-buy notice or end-of-life risk for new designs. The ROHS3 compliance covers current EU and global material restrictions, so no exemption expiry to track for ongoing production.