100 V N-channel HEXFET® — DPAK power switch
The IRFR540ZTRLPBF: It comes in a surface-mount DPAK (TO-252-3) package with an exposed tab for thermal dissipation to the PCB copper plane.
That 28.5 mOhm figure is specified at 25°C junction — at 125°C the Rds(on) roughly doubles, so the conduction-loss budget in a hot environment should use approximately 57 mOhm as the working value. Total gate charge is 59 nC at 10 V. For a 100 kHz switching frequency the average gate-drive current needed is about 5.9 mA, which most standard gate drivers can supply without excessive dissipation. The input capacitance Ciss is 1690 pF at 25 V drain-source, giving a rough Miller plateau charge that influences switching speed.
Temperature range and thermal limits
Maximum power dissipation is 91 W at case temperature 25°C, derated with junction temperature per the datasheet curve.
Lifecycle and compliance
It is ROHS3 compliant, meaning no restricted substances above the threshold limits.