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Infineon Technologies IRFR540ZTRLPBF

IRFR540ZTRLPBF MOSFET N-Ch 100V 35A DPAK, 28.5mOhm Rds(on)

MPNIRFR540ZTRLPBF
End of Life

Infineon HEXFET® IRFR540ZTRLPBF, N-Channel MOSFET, 100 V Vdss, 35 A Id, 28.5 mOhm Rds(on) at 10 V, 59 nC Qg, -55°C to 175°C, DPAK (TO-252) surface mount.

$1.14Ref. price · indicative, final on quote
Infineon Technologies IRFR540ZTRLPBF datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFR540ZTRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation91W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 50µA
Rds on (Max) @ id, vgs28.5mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs59 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1690 pF @ 25 V

Product details

100 V N-channel HEXFET® — DPAK power switch

The IRFR540ZTRLPBF: It comes in a surface-mount DPAK (TO-252-3) package with an exposed tab for thermal dissipation to the PCB copper plane.

That 28.5 mOhm figure is specified at 25°C junction — at 125°C the Rds(on) roughly doubles, so the conduction-loss budget in a hot environment should use approximately 57 mOhm as the working value. Total gate charge is 59 nC at 10 V.

Temperature range and thermal limits

It is ROHS3 compliant, meaning no restricted substances above the threshold limits.

Frequently asked questions

What is the datasheet for IRFR540ZTRLPBF?

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What is the equivalent of IRFR540ZTRLPBF?

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Is IRFR540ZTRLPBF RoHS compliant?

Compliance verification is critical for regulatory and environmental requirements.

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