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Infineon Technologies IRFR5305TRPBF
Infineon Technologies

IRFR5305TRPBF P-Channel MOSFET, 55 V, 31 A, D-Pak

MPNIRFR5305TRPBF
End of Life

Infineon IRFR5305TRPBF, HEXFET® series, P-Channel MOSFET, 55 V Vdss, 31 A continuous drain, 65 mOhm Rds(on) at 16 A, 10 V gate drive, D-Pak (TO-252) surface mount, -55°C to 175°C junction temperature.

$1.55Ref. price · indicative, final on quote
IRFR5305TRPBF datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFR5305TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

P-channel power switch in a D-Pak

The IRFR5305TRPBF is a P-Channel enhancement-mode MOSFET from Infineon's HEXFET® series, housed in a D-Pak (TO-252) surface-mount package. The 65 mOhm max on-resistance at 16 A, 10 V gate drive sets the conduction-loss floor for a load switch or low-side inverter leg.

Gate drive and switching budget

Total gate charge is 63 nC at 10 V — a 10 V gate-drive rail is needed to hit the rated Rds(on). Input capacitance is 1200 pF at 25 V Vds. For a 100 kHz switching frequency, the average gate-drive current is about 6.3 mA, which a standard gate-driver IC handles without a booster stage. The ±20 V Vgs(max) rating gives margin for gate-drive overshoot in hard-switched topologies. The 4 V typical gate threshold at 250 µA drain current means the device is fully off below 4 V gate-to-source.

Thermal and mechanical fit

Junction temperature range is -55°C to 175°C, suitable for automotive under-hood and industrial motor-drive environments where ambient heat soaks the PCB. The D-Pak (TO-252) footprint shares the same land pattern as the standard DPAK, so a board already laid out for an N-channel DPAK can accept this P-channel part with only a gate-drive polarity change.

Lifecycle and sourcing

It is ROHS3 compliant.

Frequently asked questions

Is IRFR5305TRPBF a direct replacement for IRFR5305?

The IRFR5305TRPBF is the tape-and-reel variant of the base IRFR5305. The die, package, and electrical ratings are identical; the suffix indicates the reel packaging format. No additional qualification or re-spin is needed when substituting one for the other on the BOM.

What is the Rds(on) of IRFR5305TRPBF?

Maximum on-resistance is 65 mOhm at 16 A drain current with 10 V gate-to-source drive. This is the spec to use for conduction-loss calculations at rated load.

Is IRFR5305TRPBF RoHS compliant?

Yes, the part is ROHS3 compliant, meaning it meets the EU RoHS directive with no exemptions for lead, mercury, cadmium, or other restricted substances.