IRFR5305TRPBF

Infineon Technologies · HEXFET® Series

Infineon IRFR5305TRPBF, HEXFET® series, P-Channel MOSFET, 55 V Vdss, 31 A continuous drain, 65 mOhm Rds(on) at 16 A, 10 V gate drive, D-Pak (TO-252) surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRFR5305TRPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 8,260 pcs
$0.55/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR5305TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Technical details

IRFR5305TRPBF
[ALLOC] verified
Quote