IRFR48ZTRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFR48ZTRPBF N-channel MOSFET, 55 V drain-source, 42 A continuous drain, 11 mOhm max Rds(on) at 10 V gate drive, D-Pak surface-mount package, -55°C to 175°C junction temperature.

Infineon Technologies IRFR48ZTRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR48ZTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation91W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 50µA
Rds on (Max) @ id, vgs11mOhm @ 37A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1720 pF @ 25 V

Technical details

55 V, 42 A N-channel — the D-Pak switch for high-current rails

The D-Pak (TO-252) footprint keeps the board area tight for a part this current-dense.

Total gate charge is 60 nC at 10 V.

Temperature range — rated for the harsh stuff

That 175°C ceiling suits engine-bay electronics, downhole tools, and avionics power stages where ambient heat pushes junction temperatures past the usual 150°C limit.

Surface-mount D-Pak (TO-252) with two leads and a tab. The tab orientation is marked by a chamfer on the package body — easy to see under magnification.

ROHS3 compliant.

IRFR48ZTRPBF
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