The IRFR4620TRLPBF is an Infineon HEXFET N-channel power MOSFET in a surface-mount DPAK (TO-252) package, rated for 200 V drain-source breakdown and 24 A continuous drain current at a 25 °C case temperature.
78 mOhm Rds(on) at 10 V — conduction loss and thermal budget
At 15 A drain current and 10 V gate drive, the maximum drain-source resistance is 78 mOhm. Conduction loss at that point is about 17.5 W. The 144 W power dissipation rating assumes an ideal heatsink — in a real DPAK layout with 1 oz copper on a standard FR-4 board, the effective dissipation is much lower.
38 nC gate charge — switching speed and driver selection
Total gate charge at 10 V is 38 nC. For a 1 A gate driver, the theoretical rise time is about 38 ns; at 100 kHz switching frequency, the average gate-drive power is under 40 mW. The input capacitance of 1710 pF at 50 V Vds is moderate, so the gate-drive loop inductance — not the driver current — often becomes the limiting factor in fast-switching layouts.
Temperature grade and environment
The 175 °C ceiling is typical for automotive-grade power MOSFETs, but the junction-to-ambient thermal resistance in a DPAK requires careful PCB thermal management to stay below that limit at full load.