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Infineon Technologies IRFR4615TRLPBF
Infineon Technologies

IRFR4615TRLPBF N-Channel MOSFET, 150 V, 33 A, 42 mOhm, DPAK

MPNIRFR4615TRLPBF
End of Life

Infineon HEXFET® IRFR4615TRLPBF, N-Channel MOSFET, 150 V Vdss, 33 A Id, 42 mOhm Rds(on) at 10 V, 26 nC Qg, D-Pak (TO-252) surface mount, -55 to 175 °C.

$1.61Ref. price · indicative, final on quote
IRFR4615TRLPBF datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFR4615TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation144W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs42mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1750 pF @ 50 V

Product details

150 V, 33 A, 42 mOhm — sizing the power switch

The 42 mOhm maximum on-resistance at Vgs=10 V and 21 A sets the conduction loss floor for a secondary-side synchronous rectifier, a DC-DC converter output switch, or a motor-drive half-bridge leg.

Gate drive budget and switching loss

Total gate charge is 26 nC at Vgs=10 V, and input capacitance Ciss is 1750 pF at Vds=50 V. For a 100 kHz switching frequency the gate driver must supply an average current of about 2.6 mA just to charge and discharge the gate — well within a standard totem-pole driver like the TC4427, but the peak current still needs to be sized for the gate resistance and the driver's output stage. The ±20 V maximum gate-source rating means a 12 V or 15 V gate drive is safe; a 10 V drive is specified for the rated Rds(on). If the design uses a 5 V logic-level gate drive, the on-resistance will be higher than the datasheet maximum — the 5 V threshold is a max of 5 V at 100 µA, so a 5 V gate drive leaves almost no overdrive margin.

DPak footprint and thermal path

The part comes in the D-Pak (TO-252) surface-mount package with the tab as the drain connection and the primary thermal path. The Cut Tape option is available for prototyping quantities.

Frequently asked questions

What are the common applications for the IRFR4615TRLPBF?

As a 150 V, 33 A N-channel MOSFET in a D-Pak package, it is typically used in DC-DC converters, secondary-side synchronous rectification, motor-drive half-bridges, power-supply output switches, and battery-protection circuits where the 42 mOhm Rds(on) keeps conduction losses manageable.

Is IRFR4615TRLPBF equivalent to IRFR4615PBF?

The IRFR4615PBF is the same die in the same D-Pak package but without the Tape & Reel suffix — the TRLPBF suffix indicates Tape & Reel packaging and ROHS3 compliance. Electrically they are identical; the difference is only in the reel format for automated assembly.

What is the difference between DPAK and D2PAK for this part?

The IRFR4615TRLPBF is in a D-Pak (TO-252) package, which is smaller than a D2PAK (TO-263). The D-Pak has a smaller tab area and lower thermal mass, so for the same copper area on the PCB the D-Pak runs hotter at high current. The D2PAK is the better choice if the board can accommodate the larger footprint and needs lower thermal resistance.

Is IRFR4615TRLPBF RoHS compliant?

Yes, it is listed as ROHS3 Compliant.