Infineon Technologies · HEXFET® Series
Infineon IRFR4105TRPBF HEXFET N-Channel MOSFET, 55 V Vdss, 27 A continuous drain, 45 mOhm Rds(on) at 10 V, 34 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 27A (Tc) |
| Power dissipation | 68W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 45mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 700 pF @ 25 V |
At 27 A the actual on-resistance will be higher due to self-heating, so budget the conduction loss using the typical Rds(on) vs temperature curve in the datasheet.
On a rework station you can swap it in the field with a hot-air pencil; just pre-tin the pad and watch the tab solder joint.
