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Infineon Technologies IRFR4104TRPBF

IRFR4104TRPBF N-Channel MOSFET, 40 V, 42 A, 5.5 mOhm, D-Pak

MPNIRFR4104TRPBF
End of Life

Infineon HEXFET® series, IRFR4104TRPBF, N-Channel MOSFET, 40 V Vdss, 42 A Id, 5.5 mOhm Rds(on) at 10 V, 89 nC Qg, D-Pak (TO-252) surface mount, -55°C to 175°C.

$1.6Ref. price · indicative, final on quote
Infineon Technologies IRFR4104TRPBF datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFR4104TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs89 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2950 pF @ 25 V

Product details

Gate charge and driver budget

Total gate charge is 89 nC at 10 V.

Thermal envelope and package

Maximum power dissipation is 140 W at the case, but the junction-to-ambient thermal resistance in the D-Pak (TO-252) surface-mount package sets the real limit — expect about 50 °C/W on a standard FR-4 footprint with 1 oz copper.

ROHS3 compliant. No official second-source cross-reference is listed, but the D-Pak footprint is standard across the industry; a functional alternative would need to match the 40 V, 5.5 mOhm, and 89 nC gate charge profile.

Frequently asked questions

Is IRFR4104TRPBF RoHS compliant?

Yes — it carries ROHS3 compliance status.