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Infineon Technologies IRFR3910TRPBF

IRFR3910TRPBF N-Channel MOSFET, 100V, 16A, DPAK

MPNIRFR3910TRPBF
End of Life

IRFR3910TRPBF, HEXFET series, N-Channel MOSFET, 100 V drain-to-source, 16 A continuous drain, 115 mOhm Rds(on) at 10 V, 44 nC gate charge, DPAK surface-mount package, -55°C to 175°C junction temperature.

$1.22Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFR3910TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs115mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds640 pF @ 25 V

Product details

100 V, 16 A N-channel — the HEXFET switching workhorse

The 115 mOhm maximum on-resistance at 10 A gate drive of 10 V defines the conduction loss floor. The 79 W package thermal capability can handle the dissipation with adequate copper area on the drain tab.

Temperature range and package — design-in notes

This suits the part for engine-bay electronics, industrial motor drives, and other high-ambient environments where the die sees sustained thermal stress. The 79 W maximum power dissipation assumes the tab is held at 25°C — real-world derating follows the package's thermal resistance, which depends on board copper area and airflow.

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