IRFR3910TRPBF

Infineon Technologies · HEXFET® Series

IRFR3910TRPBF, HEXFET series, N-Channel MOSFET, 100 V drain-to-source, 16 A continuous drain, 115 mOhm Rds(on) at 10 V, 44 nC gate charge, DPAK surface-mount package, -55°C to 175°C junction temperature.

Infineon Technologies IRFR3910TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR3910TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs115mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds640 pF @ 25 V

Technical details

IRFR3910TRPBF
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