100 V, 16 A N-channel — the HEXFET switching workhorse
The IRFR3910TRPBF: It is housed in a DPAK (TO-252) surface-mount package, suited for automated assembly and moderate-power switching stages. The 115 mOhm maximum on-resistance at 10 A gate drive of 10 V defines the conduction loss floor. The 79 W package thermal capability can handle the dissipation with adequate copper area on the drain tab.
Gate charge and switching — sizing the driver
Total gate charge is 44 nC at 10 V gate drive. The 640 pF input capacitance at 25 V drain bias gives a rough handle on the switching speed. The ±20 V maximum gate-source rating provides margin for gate-drive overshoot in hard-switching topologies; a 10 V drive voltage is specified for the rated Rds(on).
Temperature range and package — design-in notes
This suits the part for engine-bay electronics, industrial motor drives, and other high-ambient environments where the die sees sustained thermal stress. The 79 W maximum power dissipation assumes the tab is held at 25°C — real-world derating follows the package's thermal resistance, which depends on board copper area and airflow.