100 V, 16 A N-channel — what this HEXFET brings to the board
The IRFR3910TRLPBF is an N-channel power MOSFET from Infineon's HEXFET series, rated for 100 V drain-to-source voltage and 16 A continuous drain current at 25°C case temperature. Packaged in a surface-mount DPAK (TO-252), it targets switching and linear applications in power supplies, DC-DC converters, motor drives, and battery management where board space is tight and the thermal path runs through the tab. The 115 mOhm maximum on-resistance at 10 A gate drive of 10 V sets the conduction loss baseline — at 16 A the Rds(on) will be higher, so derate for your actual load current. Gate charge of 44 nC at 10 V means a standard gate driver can switch it in the tens of kilohertz without excessive drive current. Junction temperature spans -55°C to 175°C, so it handles the thermal cycling of an outdoor telecom rectifier or an engine-bay auxiliary load without derating to a lower temperature grade.
Active and ROHS3 — no LTB clock ticking
Infineon lists the IRFR3910TRLPBF as Active, with ROHS3 compliance. No last-time-buy notice or obsolescence risk is on record for this order code.