Infineon Technologies · HEXFET® Series
Infineon HEXFET® series, IRFR3910TRLPBF, N-Channel MOSFET, 100V Vdss, 16A Id, 115mOhm Rds(on) @ 10V, DPAK (TO-252), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 79W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 115mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 640 pF @ 25 V |
The 115 mOhm maximum on-resistance at 10 A gate drive of 10 V sets the conduction loss baseline — at 16 A the Rds(on) will be higher, so derate for your actual load current. Gate charge of 44 nC at 10 V means a standard gate driver can switch it in the tens of kilohertz without excessive drive current.
No last-time-buy notice or obsolescence risk is on record for this order code.
