Infineon HEXFET series, IRFR3806TRPBF, N-Channel MOSFET, 60V Vdss, 43A Id, 15.8 mOhm Rds(on) at 10V, 30 nC Qg, DPak (TO-252) surface mount, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 43A (Tc) |
| Power dissipation | 71W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 50µA |
| Rds on (Max) @ id, vgs | 15.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 50 V |
Total gate charge is 30 nC at 10 V. For a hard-switched converter at 100 kHz, the average gate-drive current is 3 mA — well within a standard driver's capability.
The DPak (TO-252) package has three leads plus a drain tab. A 1-inch-square copper pad on a 2-oz board keeps the junction below 125°C at 25 A continuous in still air.
No direct replacement or second-source is listed in the official records. The IPD50R950CEAUMA1 is a CoolMOS CE part with 500 V drain-source and 950 mOhm Rds(on) — it is a different voltage and on-resistance class and is not a functional substitute.