Skip to main content
Infineon Technologies IRFR3711TRLPBF — Discrete Semiconductors
Infineon Technologies

IRFR3711TRLPBF HEXFET N-Channel MOSFET, 6.5 mOhm Rds(on)

MPNIRFR3711TRLPBF
Active

Infineon HEXFET® N-Channel Power MOSFET, IRFR3711TRLPBF, 20 V Vds, 6.5 mOhm Rds(on) @ 15 A, 10 V, 100 A pulsed, 44 nC Qg @ 4.5 V, -55 to 150 °C Tj, DPAK (TO-252) surface mount.

$0.46Ref. price · indicative, final on quote
IRFR3711TRLPBF datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFR3711TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±20 V
Power_w2.5
Package_typeTube
Capacitance_uf0.003
Product_statusActive
Supply_voltage_v20.0
Vgs(Th) (Max) @ id3 V @ 250µA
Switching_current_a100.0
Rds on (Max) @ id, vgs6.5mOhm @ 15 A, 10 V
Gate charge (Qg) (Max) @ vgs44 nC @ 4.5 V

Product details

What the 6.5 mOhm Rds(on) means for the BOM

The IRFR3711TRLPBF is an Infineon HEXFET N-channel power MOSFET in a DPAK (TO-252) surface-mount package. Its 6.5 mOhm maximum on-resistance at 15 A with a 10 V gate drive keeps conduction losses low in DC-DC converters, load switches, and motor pre-drive stages — the kind of circuit where every milliohm of Rds(on) shaves a fraction of a watt off the thermal budget. The 100 A pulsed drain current rating covers inrush events and capacitor pre-charge without oversizing the FET, but the continuous current is package-limited; the designer sizes the copper pad area accordingly.

Gate drive and switching — 44 nC at 4.5 V

Gate charge of 44 nC at 4.5 V. The ±20 V Vgs maximum gives headroom for gate-drive transients.

Lifecycle and sourcing

That makes it a clean choice for BOM freeze and production qualification. For dual-sourcing or supply resilience, the DPAK footprint is shared across the Infineon HEXFET family; a pin-compatible sibling with a different Rds(on) tier can be qualified without a board respin.

Frequently asked questions

Is IRFR3711TRLPBF obsolete?

No — the IRFR3711TRLPBF is Active in production. There is no end-of-life notice, and it remains suitable for new designs.

What is the Rds(on) of IRFR3711TRLPBF?

Maximum on-resistance is 6.5 mOhm at 15 A drain current with a 10 V gate drive. That is the figure to use for conduction-loss calculations in the BOM.

What is the gate charge of IRFR3711TRLPBF?

Total gate charge is 44 nC at 4.5 V Vgs. This low Qg allows direct drive from 5 V logic or a 3.3 V MCU with a level shifter.

What temperature range does IRFR3711TRLPBF cover?

The junction temperature range is -55°C to 150°C, covering industrial, automotive under-hood, and outdoor telecom environments.