Infineon HEXFET® N-Channel Power MOSFET, IRFR3711TRLPBF, 20 V Vds, 6.5 mOhm Rds(on) @ 15 A, 10 V, 100 A pulsed, 44 nC Qg @ 4.5 V, -55 to 150 °C Tj, DPAK (TO-252) surface mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 150°C(TJ) |
| Vgs | ±20 V |
| Power | 2.5 |
| Package_type | Tube |
| Capacitance_uf | 0.003 |
| Status | Active |
| Supply voltage | 20.0 |
| Vgs(Th) (Max) @ id | 3 V @ 250µA |
| Switching current | 100.0 |
| Rds on (Max) @ id, vgs | 6.5mOhm @ 15 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 4.5 V |
The 100 A pulsed drain current rating covers inrush events and capacitor pre-charge without oversizing the FET, but the continuous current is package-limited; the designer sizes the copper pad area accordingly.
Gate charge of 44 nC at 4.5 V. The ±20 V Vgs maximum gives headroom for gate-drive transients.
That makes it a clean choice for BOM freeze and production qualification.
No — the IRFR3711TRLPBF is Active in production. There is no end-of-life notice, and it remains suitable for new designs.
Maximum on-resistance is 6.5 mOhm at 15 A drain current with a 10 V gate drive. That is the figure to use for conduction-loss calculations in the BOM.
Total gate charge is 44 nC at 4.5 V Vgs. This low Qg allows direct drive from 5 V logic or a 3.3 V MCU with a level shifter.
The junction temperature range is -55°C to 150°C, covering industrial, automotive under-hood, and outdoor telecom environments.