Infineon Technologies · HEXFET® Series
Infineon HEXFET series IRFR3710ZTRPBF, N-Channel MOSFET, 100V Vdss, 42A continuous drain, 18 mOhm Rds(on) at 10V, DPak (TO-252) surface-mount package, -55 to 175 °C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 42A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 33A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2930 pF @ 25 V |
The IRFR3710ZTRPBF: Total gate charge is 100 nC at 10 V. Input capacitance is 2930 pF at 25 V.
Junction temperature range is -55 to 175 °C — the 175 °C ceiling suits high-ambient environments like motor drives or under-hood automotive.
ROHS3 compliant, so no exemption paperwork for EU/UK markets.
