IRFR3709ZTRPBF, Infineon HEXFET® N-Channel MOSFET, 30 V Vdss, 86 A continuous drain at 25°C, 6.5 mOhm Rds(on) at 15 A, 10 V gate drive, D-Pak (TO-252-3) surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 86A (Tc) |
| Power dissipation | 79W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.25V @ 250µA |
| Rds on (Max) @ id, vgs | 6.5mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 2330 pF @ 15 V |
The 6.5 mOhm maximum on-resistance at 15 A with a 10 V gate drive sets conduction losses. The 79 W package limit at case temperature demands a good thermal path to the heatsink.
The IRFR3709ZTRPBF carries an Active product status with ROHS3 compliance. For BOM planning, this part is a safe selection for new designs and ongoing production without near-term supply disruption.
Buyers need to confirm immediate availability and cost to proceed with procurement.
Design engineers validate electrical characteristics like Rds(on), Vgs(th), and package details before layout.
Sourcing buyers or technicians need alternatives for second sourcing or when part is unavailable.
Production planners require lead time to schedule manufacturing and avoid downtime.
Lifecycle status determines whether the part is safe to design in or if a last-time buy is needed.
Maintenance techs and design engineers need physical dimensions for PCB layout or replacement.