Skip to main content
Infineon Technologies IRFR3607TRPBF

IRFR3607TRPBF N-Channel MOSFET, 75V 56A, 9mOhm Rds(on)

MPNIRFR3607TRPBF
End of Life

IRFR3607TRPBF, HEXFET N-Channel MOSFET, 75 V Vdss, 56 A Id, 9 mOhm Rds(on) at 46 A, 10 V, 84 nC Qg, D-Pak (TO-252) surface mount, -55°C to 175°C junction.

$1.65Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFR3607TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs9mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3070 pF @ 50 V

Product details

The 175°C junction rating extends the safe operating area into high-ambient environments like an engine bay or a sealed power supply.

Gate charge and switching — sizing the driver

Total gate charge is 84 nC at 10 V. At a 100 kHz switching frequency the gate driver must source 8.4 mA average current; a 200 kHz design needs 16.8 mA. The 3070 pF input capacitance at 50 V Vds gives the driver a capacitive load to charge each cycle — a driver with 2 A peak current capability will switch the gate in roughly 30 ns. The 4 V threshold at 100 µA Id means a 5 V logic-level gate drive will turn the device on hard, but the 10 V drive voltage listed for the minimum Rds(on) is where the lowest conduction loss occurs.

D-Pak footprint — thermal and layout notes

The TO-252 (DPak) surface-mount package has an exposed drain tab. The 140 W power dissipation at case temperature assumes the tab is soldered to a copper pad with thermal vias to an inner-layer or backside copper plane. Without adequate thermal management the junction temperature rises above 175°C at high continuous current.

Frequently asked questions

How does IRFR3607TRPBF compare to a high-voltage CoolMOS part like IPD50R950CEAUMA1?

The IPD50R950CEAUMA1 is a 500 V CoolMOS CE device with 950 mOhm Rds(on) and 4.3 A switching current — it is designed for high-voltage AC-DC converters, not the same application space. The IRFR3607TRPBF at 75 V and 9 mOhm targets low-voltage, high-current power stages. They are not functional substitutes.