IRFR3607TRPBF

Infineon Technologies · HEXFET® Series

IRFR3607TRPBF, HEXFET N-Channel MOSFET, 75 V Vdss, 56 A Id, 9 mOhm Rds(on) at 46 A, 10 V, 84 nC Qg, D-Pak (TO-252) surface mount, -55°C to 175°C junction.

Infineon Technologies IRFR3607TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR3607TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs9mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3070 pF @ 50 V

Technical details

The 175°C junction rating extends the safe operating area into high-ambient environments like an engine bay or a sealed power supply.

Total gate charge is 84 nC at 10 V. At a 100 kHz switching frequency the gate driver must source 8.4 mA average current; a 200 kHz design needs 16.8 mA.

D-Pak footprint — thermal and layout notes

The TO-252 (DPak) surface-mount package has an exposed drain tab. Without adequate thermal management the junction temperature rises above 175°C at high continuous current.

IRFR3607TRPBF
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