IRFR3504ZTRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFR3504ZTRPBF, N-Channel MOSFET, 40 V Vdss, 42 A Id, 9 mOhm Rds(on) at 10 V, 45 nC Qg, D-Pak (TO-252) surface mount, -55°C to 175°C junction.

Infineon Technologies IRFR3504ZTRPBF
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[IN STOCK] In Stock: 306 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR3504ZTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1510 pF @ 25 V

Technical details

40 V N-channel HEXFET in a D-Pak — what it handles

The 45 nC gate charge at 10 V tells you the switching energy — budget a gate driver that can source and sink that charge fast enough for your switching frequency.

Input capacitance of 1510 pF at 25 V drain-source is moderate.

Package and mounting — D-Pak (TO-252)

The D-Pak (TO-252) surface-mount package has three leads plus the tab, which is the drain connection. The tab is soldered to the PCB copper for both electrical connection and thermal path. The mounting type is surface mount; no through-hole hole pattern is needed.

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