40 V N-channel HEXFET in a D-Pak — what it handles
The IRFR3504ZTRPBF is an Infineon HEXFET N-channel power MOSFET rated for 40 V drain-to-source and 42 A continuous drain current at 25 °C case temperature. Its 9 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses manageable for a 40 V class part in a D-Pak (TO-252) surface-mount package. The 45 nC gate charge at 10 V tells you the switching energy — budget a gate driver that can source and sink that charge fast enough for your switching frequency. The junction temperature range spans -55°C to 175°C. The 90 W power dissipation at case temperature is the package limit.
Sourcing and lifecycle — active, no LTB clock
The IRFR3504ZTRPBF carries an Active product status with ROHS3 compliance.
What the ratings mean for the BOM
Input capacitance of 1510 pF at 25 V drain-source is moderate. The 45 nC gate charge at 10 V is the number to use for gate-driver power budgeting.
Package and mounting — D-Pak (TO-252)
The D-Pak (TO-252) surface-mount package has three leads plus the tab, which is the drain connection. The tab is soldered to the PCB copper for both electrical connection and thermal path. The mounting type is surface mount; no through-hole hole pattern is needed.
