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Infineon Technologies IRFR2905ZTRPBF

IRFR2905ZTRPBF N-Channel MOSFET, 55 V, 42 A, 14.5 mOhm DPAK

MPNIRFR2905ZTRPBF
End of Life

Infineon HEXFET IRFR2905ZTRPBF, N-Channel MOSFET, 55 V Vdss, 42 A Id, 14.5 mOhm Rds(on) at 10 V, DPAK (TO-252), -55 to 175 °C.

$1.27Ref. price · indicative, final on quote
Infineon Technologies IRFR2905ZTRPBF datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFR2905ZTRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs14.5mOhm @ 36A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1380 pF @ 25 V

Product details

14.5 mOhm at 36 A — the conduction-loss floor

The 44 nC figure also means the driver's peak current rating should be checked against the rise-time target; a 2 A driver will switch the gate in roughly 22 ns, ignoring layout inductance.

Thermal and temperature range

Maximum power dissipation is 110 W at the case — the actual usable power depends on the PCB copper area and airflow. The 175 °C Tj max provides headroom for high-ambient designs, but the RthJA from the DPAK package to ambient will be the limiting factor in a real layout.

Frequently asked questions

What is the Rds(on) of IRFR2905ZTRPBF?

This is the spec to use for worst-case conduction-loss calculations in the power stage.

Is IRFR2905ZTRPBF RoHS compliant?

Yes, the part is ROHS3 compliant, meaning it meets the EU RoHS directive without any exempted substances.