Infineon Technologies · HEXFET® Series
IR (Infineon) HEXFET® N-Channel MOSFET, 75 V Vdss, 42 A continuous drain, 22 mOhm Rds(on) at 10 V, 51 nC gate charge, PG-TO252-3-901/DPAK package, ROHS3 compliant.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 75 V |
| Current - continuous drain (Id) @ 25°C | 42A (Tc) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 50µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 51 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1440 pF @ 25 V |
The IRFR2607ZTRPBF: Gate charge totals 51 nC at 10 V, so a gate driver sourcing 1 A switches the FET in roughly 50 ns. Input capacitance is 1440 pF at 25 V Vds — moderate for a 42 A device, meaning the switching losses stay manageable up to a few hundred kHz in a typical buck or boost converter.
ROHS3 compliant.