150 V, 24 A — the switching pair that defines the conduction loss budget
The on-resistance is specified at 95 mOhm maximum at Vgs = 10 V and Id = 14 A — this is the conduction loss floor you size the heatsink for. The D-Pak (TO-252-3) surface-mount package keeps the board footprint small for medium-power DC-DC converters, battery protection circuits, and motor pre-drive stages where 150 V headroom covers 48 V to 72 V bus transients without avalanche derating.
Gate drive budget: 45 nC Qg at 10 V
Total gate charge is 45 nC at Vgs = 10 V. At a 100 kHz switching frequency the average gate drive current is 4.5 mA — well within a standard MOSFET driver's capability, but the peak current during the Miller plateau requires a driver with at least 1 A peak output to keep switching edges clean and avoid shoot-through in a half-bridge. Input capacitance Ciss is 890 pF at Vds = 25 V. The ratio of Ciss to Qg tells you the driver sees a predominantly capacitive load at turn-on; the gate resistor sets the rise time, not the driver's current limit at these charge levels.
175°C junction — rated for the hot end of the assembly
That 175°C ceiling is the key difference from commodity 150°C-rated MOSFETs — it buys margin in under-hood automotive, industrial motor drive, and power supply secondary-side rectification where ambient air inside the enclosure can hit 105°C and the junction climbs from self-heating. Maximum power dissipation is 140 W at Tc = 25°C. With the 95 mOhm Rds(on) at 25°C, conduction losses at 14 A are about 18.6 W — the remaining headroom to the 140 W ceiling is consumed by switching losses and the Rds(on) temperature coefficient (roughly 1.5× at 125°C junction).