200V, 5A N-channel HEXFET in D-Pak — BOM fit and switching capability
With a maximum on-resistance of 600mOhm at 2.9A and 10V gate drive, conduction losses stay predictable for a 200V-class device — the 23 nC total gate charge at 10V keeps the gate-drive current requirement modest, suiting it for medium-frequency switching in power supplies and motor drives.
Gate charge and input capacitance — switching-speed trade-off
The 23 nC gate charge at 10V and 300 pF input capacitance at 25V Vds mean the gate driver sees a moderate capacitive load — a 1A gate driver can charge the gate in about 23 ns, enabling switching frequencies up to several hundred kilohertz without excessive drive power.