200V, 5A N-channel HEXFET in D-Pak — BOM fit and switching capability
With a maximum on-resistance of 600mOhm at 2.9A and 10V gate drive, conduction losses stay predictable for a 200V-class device — the 23 nC total gate charge at 10V keeps the gate-drive current requirement modest, suiting it for medium-frequency switching in power supplies and motor drives.
Gate charge and input capacitance — switching-speed trade-off
The 23 nC gate charge at 10V and 300 pF input capacitance at 25V Vds mean the gate driver sees a moderate capacitive load — a 1A gate driver can charge the gate in about 23 ns, enabling switching frequencies up to several hundred kilohertz without excessive drive power. The 43W maximum power dissipation at case temperature limits the continuous current in a real layout — the 5A rating assumes the case is held at 25°C; in a typical 85°C ambient the derated current is lower, so the thermal design (copper area, airflow) sets the practical limit.