IRFR220NTRLPBF

Infineon Technologies · HEXFET® Series

Infineon IRFR220NTRLPBF HEXFET N-Channel MOSFET, 200 V Vdss, 5 A continuous drain, 600 mOhm Rds(on) at 10 V, 23 nC gate charge, D-Pak (TO-252) surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRFR220NTRLPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR220NTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation43W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 2.9A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds300 pF @ 25 V

Technical details

On-resistance and gate charge — what drives the switching loss budget

At 5 A full load, the conduction loss hits about 5 W — well within the 43 W package dissipation limit at the case, so the derating margin is generous for most layouts. Gate charge totals 23 nC at 10 V, which means a standard gate driver IC can switch this FET at 100 kHz without pushing the drive current above 2.3 mA average; the 300 pF input capacitance at 25 V drain-source confirms the gate drive load is light.

Temperature range and package — where this FET survives

Maximum gate-source voltage is ±20 V, so a 12 V or 15 V gate drive is safe — just keep the gate loop short to avoid ringing that punches through the oxide.

IRFR220NTRLPBF
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