The Infineon IRFR220NTRLPBF is an N-channel enhancement-mode MOSFET from the HEXFET series, built with a planar stripe DMOS process.
On-resistance and gate charge — what drives the switching loss budget
At 5 A full load, the conduction loss hits about 5 W — well within the 43 W package dissipation limit at the case, so the derating margin is generous for most layouts. Gate charge totals 23 nC at 10 V, which means a standard gate driver IC can switch this FET at 100 kHz without pushing the drive current above 2.3 mA average; the 300 pF input capacitance at 25 V drain-source confirms the gate drive load is light.
Temperature range and package — where this FET survives
Maximum gate-source voltage is ±20 V, so a 12 V or 15 V gate drive is safe — just keep the gate loop short to avoid ringing that punches through the oxide.